TitleIn-Situ Fluorine-Doped Znsno Thin Film and Thin-Film Transistor
AuthorsYin,Xuemei
Lin,Delang
Zhong,Wei
Deng,Sunbin
Xu,Yuming
Chen,Yayi
Lu,Lei
Li,Guijun
Kwok,HoiSing
Li,Yi
Chen,Rongsheng
AffiliationThe School of artificial intelligence, Zhuhai City Polytechnic College, Zhuhai, China
The School of Microelectronics, South China University of Technology, Guangzhou, China
The School of Integrated Circuits, Guangdong University of Technology, Guangzhou, China
Purdue University, West Lafayette, United States
The State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong
The Hong Kong University of Science and Technology, Hong Kong
Zhuhai Southern Integrated Circuit Design Service Center, Zhuhai, China
Peking University, China
KeywordsThin film transistors
Fabrication - Field effect transistors - Fluorine - Oxide semiconductors - Thin film circuits - Thin films - Tin compounds - Zinc compounds
Issue Date6-Mar-2023
PublisherSSRN
Abstract<div data-language="eng" data-ev-field="abstract">In this paper, in-situ fluorine-doped ZnSnO (ZTO:F) thin films prepared by co-sputtering are proposed. It was found that the F had been successfully introduced into the ZTO thin films and distributed uniformly in the bulk. The corresponding top-contact bottom-gated ZTO:F thin film transistors (TFTs) were fabricated with an annealing temperature of 350 oC. The fabricated TFTs exhibit a field-effect mobility of 14.2 cm2V-1s-1, on-off ratio of over 109, and subthreshold swing (SS) as low as 87 mV/decade due to the incorporation of F. In addition, the bias stability of fabricated TFTs was also examined and the Vth shifts under negative gate bias stress are not more than &plusmn;0.1V even without any passivation. It is expected that the In-free ZTO:F amorphous oxide semiconductor and the corresponding TFTs have potential for low-cost and environmentally safe fabrication.<br/></div> &copy; 2023, The Authors. All rights reserved.
URIhttp://hdl.handle.net/20.500.11897/673161
ISSN1556-5068
DOI10.2139/ssrn.4380129
IndexedEI
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