用离子束技术研究稀磁半导体和纳米磁性材料

Abstract

综述用离子束技术研究稀磁半导体和纳米磁性材料的构建、调控和改性的进展和现状.离子束注入是优选的构建和调控方法,测试结果表明在GaN和ZnO等新半导体光电材料中注入Mn、Ni和Co等过渡金属离子可得到低温和室温下的铁磁性.离子束分析技术给出这些新材料薄膜的微结构信息,透射电镜下观察到过饱和剂量Mn~+注入GaN形成的纳米磁性颗粒.

In this paper,we focus on constitution,magnetism modification and characterization of GaN-based materials using ion beam technology and formation of the nano structure by implanting Mn~+ or Co~+ ion of different doses into the film samples.SQUID and AGM were used to measure the magnetic properties,such as coercivity and saturation magnetization,for the samples before and after annealing,M-H and M-T curves showed ferromagnetism in the films at both low temperature and room temperature.RBS/C,PIXE and XRD were used to analyze the microstmcture,content of doping transition metal and damage.The nano-cluster of ferromagnetism particle was observed under HRTEM.