204

127

76

1
Pending Claim 毫米波5G产业界研究现状
4 0
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Pending Claim TD-SCDMA移动通信系统高铁无线信道模型
2 0
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Pending Claim 世界主要国家与组织5G研究进展
2 0
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Pending Claim 毫米波5G无线信号传输特性分析
2 0
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Pending Claim 毫米波5G无线信道模型测量与分析
2 0
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2017
Pending Claim 一种智能交通网中的盲切换技术

2017年力学与土木工程国际学术会议

4 0
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Pending Claim 高铁无线宽带接入网技术研究现状

2017年力学与土木工程国际学术会议

7 0
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Pending Claim Summary of the Study on High Speed Railway Access Network

PROCEEDINGS OF THE 2017 GLOBAL CONFERENCE ON MECHANICS AND CIVIL ENGINEERING (GCMCE 2017)

10 0
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Pending Claim An empirical analysis of the radio propagation characteristics in high-speed railway environment

2nd International Seminar on Advances in Materials Science and Engineering (ISAMSE)

3 0
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Pending Claim A Blind Handover Technique for the Intelligent Transportation Network

PROCEEDINGS OF THE 2017 GLOBAL CONFERENCE ON MECHANICS AND CIVIL ENGINEERING (GCMCE 2017)

10 0
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2016
Pending Claim Improved effective field decomposition (EFD)-based capacitance model with 3-D terminal and terminal fringe components

Journal of Computational and Theoretical Nanoscience

40 0
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Pending Claim A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology

IEEE TRANSACTIONS ON ELECTRON DEVICES

3 0
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Pending Claim Research progress on core-shell nanowire FETs
13 0
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Pending Claim 宽带跟踪保持放大器失真的分析和计算

微电子学与计算机

78 2
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Pending Claim A Gate-All-Around Tunneling Field-Effect Transistor with SiO2 Core and Si Shell Structure

journal of computational and theoretical nanoscience

20 0
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Pending Claim A Novel Barrier Controlled Tunnel FET

ieee electron device letters

35 1
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Pending Claim Derivative Superposition Numerical Method for Double-Gate MOSFET Transistor Application to RF Mixer

journal of computational and theoretical nanoscience

21 0
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Pending Claim Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs

journal of computational and theoretical nanoscience

12 0
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Pending Claim A Comparative Study of Ballistic Transport Models for Nanowire MOSFETs

chinese physics letters

15 0
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Pending Claim Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOSFETs

journal of computational and theoretical nanoscience

11 0
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Pending Claim A Compact Diode Array Model for Phase Change Memory Application

journal of computational and theoretical nanoscience

39 0
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Pending Claim A Nonlinear Poisson-Schrodinger Solver Under Cylindrical Coordinate for Quantum Effect in Nanowire MOSFET

journal of computational and theoretical nanoscience

19 0
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Pending Claim A Compact CMOS Compatible Oxide Antifuse With Polysilicon Diode Driver

ieee电子器件汇刊

20 1
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Pending Claim A Junctionless Nanowire Transistor With a Dual-Material Gate

ieee电子器件汇刊

18 1
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Pending Claim A nano-metallic-particles-based CMOS image sensor for DNA detection

chinese physics b

15 0
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Pending Claim Parameter Extraction of Nano-Scale MOSFET by a Forward Gated-Diode Method

journal of computational and theoretical nanoscience

15 0
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Pending Claim Unified Scale Length for Four-Terminal Double-Gate MOSFETs

ieee电子器件汇刊

13 1
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Pending Claim 分裂栅结构的纳米线场效应晶体管
64 0
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Pending Claim Simulation study on a new dual-material nanowire MOS surrounding-gate transistor

journal of nanoscience and nanotechnology

13 0
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Pending Claim Forward gated-diode method for parameter extraction of MOSFETs

journal of semiconductors

40 0
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Pending Claim Comparison and improvement of two core compact models for double-gate MOSFETs

固体电子学

36 1
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Pending Claim Numerical Simulation of Detection Response of Field Effect MOS Transistor to Modulated Terahertz Radiation Signal

journal of computational and theoretical nanoscience

14 0
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Pending Claim Study on Transport Characteristics of Silicon-Germanium Nanowire MOSFETs with Core-Shell Structure

journal of computational and theoretical nanoscience

14 0
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Pending Claim Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect

microelectronics reliability

19 1
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2009
Pending Claim A physical based Hot Carrier Injection compact model for nanoscale FinFET

Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009

4 0
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Pending Claim Computation efficient yet accurate surface potential based analytic model for symmetric DG MOSFETs to predict current-voltage characteristics

Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009

3 0
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Pending Claim Analytic MOSFET surface potential model with inclusion of poly-gate accumulation, depletion, and inversion effects

Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009

5 0
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Pending Claim 二极管方程新的解析近似解

固体电子学研究与进展

81 2
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Pending Claim A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs

journal of semiconductors

13 0
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Pending Claim Benchmark tests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK

journal of semiconductors

21 0
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Pending Claim An Analytical Terahertz Detection Theory for Silicon-Based Nanowire MOS Field Effect Transistor

journal of computational and theoretical nanoscience

26 0
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Pending Claim FinFET reliability study by forward gated-diode generation-recombination current

semiconductor science and technology

35 1
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Pending Claim An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure

ieee电子器件汇刊

40 1
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Pending Claim Verilog-A model for phase change memory simulation
22 1
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Pending Claim 非掺杂对称双栅的基于完整表面电势的核心模型

半导体学报

95 3
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Pending Claim A complete surface potential-based core model for undoped symmetric double-gate mosfets

pan tao ti hsueh paochinese journal of semiconductors

12 0
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Pending Claim A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design

ieee电子器件汇刊

26 1
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Pending Claim Analytic channel potential solution to the undoped surrounding-gate MOSFETs

固体电子学

16 1
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Pending Claim A CMOS image sensor utilizing opacity of nanometallic particles for DNA detection

ieee电子器件汇刊

13 1
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Pending Claim An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs

ieee电子器件汇刊

17 1
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Pending Claim A unified carrier-based model for undoped symmetric double-gate and surrounding-gate MOSFETs

semiconductor science and technology

12 0
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Pending Claim Benchmark tests on surface potential based charge-sheet models

tien tzu hsueh paoacta electronica sinica

58 1
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Pending Claim 一种基于载流子的双栅MOSFET解析模型

半导体学报

76 2
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Pending Claim BSIM model research and recent progress

pan tao ti hsueh paochinese journal of semiconductors

20 0
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Pending Claim Carrier-based analytic model for the undoped symmetric double-gate MOSFETs

pan tao ti hsueh paochinese journal of semiconductors

19 0
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Pending Claim 对表面势为基础的MOSFET片电荷模型的基本检验

电子学报

83 2
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Pending Claim BSIM模型的研究和最近进展

半导体学报

136 2
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Pending Claim Numerical study on a lateral double-gate tunnelling field effect transistor

chinese physics letters

18 0
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Pending Claim A new analytic approximation to general diode equation

固体电子学

9 1
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2005
Pending Claim 基于载流子方法的双栅MOSFET解析模型发展
130 2
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2003
Pending Claim 场限环结构电压和边界峰值电场分布及环间距优化

固体电子学研究与进展

102 2
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Pending Claim 纳米MOS器件中的超浅结和相关离子掺杂新技术的发展

固体电子学研究与进展

123 3
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Pending Claim Ultra-shallow junction used in nano devices and development of related ion-doping techniques

guti dianzixue yanjiu yu jinzhanresearch and progress of solid state electronics

14 0
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Pending Claim 由等价掺杂转换理论得到非对称线性缓变P-N结的击穿特性

半导体学报

90 2
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Pending Claim 对异型硅岛实现的厚膜全耗尽SOI MOSFET的模拟研究

电子学报

111 3
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Pending Claim Simulation analysis of thick film fully depleted SOI MOSFET implemented by anti-doped silicon island

tien tzu hsueh paoacta electronica sinica

15 0
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Pending Claim Prediction of breakdown voltage of asymmetric linearly-graded junction by equivalent doping profile transformation method

pan tao ti hsueh paochinese journal of semiconductors

12 0
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Pending Claim Novel combined gated-diode technique for extracting lateral distribution of interface traps in SOI NMOSFET

pan tao ti hsueh paochinese journal of semiconductors

24 0
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Pending Claim Forward gated-diode technique for separating front gate interface-from oxide-traps induced by hot-carrier-stress in SOI-NMOSFETs

pan tao ti hsueh paochinese journal of semiconductors

20 0
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Pending Claim Hot carrier-induced interface traps in N-channel MOSFET/SOI characterized by a forward gated-diode technique

tien tzu hsueh paoacta electronica sinica

27 0
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Pending Claim 平面结场板结构表面场分布的二维解析

半导体学报

256 3
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Pending Claim RESURF LDMOS功率器件表面场分布和击穿电压的解析模型

半导体学报

89 2
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Pending Claim 平行平面穿通结击穿电压的计算及比较

电子学报

260 4
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Pending Claim 栅控二极管正向R-G电流对SOI体陷阱特征和硅膜结构的依赖性

半导体学报

263 3
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Pending Claim TFSOI RESURF功率器件表面电场分布和优化设计的新解析模型

半导体学报

147 4
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Pending Claim 圆柱突变结击穿电压及电场沿结边的分布

半导体情报

68 2
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Pending Claim 正向栅控二极管的R-G电流直接表征NMOSFET

半导体学报

140 2
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Pending Claim 6H-SiC单极功率器件性能的温度关系

半导体学报

132 2
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Pending Claim 正向栅控二极管监测F-N电应力诱生的SOI-MOSFET界面陷阱

半导体学报

121 3
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Pending Claim Analytical model of surface field distribution and breakdown voltage for RESURF LDMOS transistor

pan tao ti hsueh paochinese journal of semiconductors

11 0
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Pending Claim Channel lateral pocket or halo region of NMOSFET characterized by interface state R-G current of the forward gated-diode

pan tao ti hsueh paochinese journal of semiconductors

13 0
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Pending Claim 2-dimensional analysis of surface electric field profile of planar junction with single-step field-plate termination structure

pan tao ti hsueh paochinese journal of semiconductors

29 0
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Pending Claim Temperature dependence of performance of 6H-SiC unipolar power devices

pan tao ti hsueh paochinese journal of semiconductors

12 0
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Pending Claim Sensitivity analysis of the back interface trap-induced R-G current obtained by a lateral SOI forward gated-diode

pan tao ti hsueh paochinese journal of semiconductors

28 0
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Pending Claim Forward gated-diode monitoring of F-N stressing-Induced interface traps of NMOSFET/SOI

pan tao ti hsueh paochinese journal of semiconductors

18 0
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Pending Claim Novel analytical model for surface electric field distribution and optimization of TFSOI RESURF devices

pan tao ti hsueh paochinese journal of semiconductors

27 0
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2000
Pending Claim 平面结场板结构表面场分布的二维解析
251 4
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Pending Claim 非对称线性缓变结击穿电压的解析计算

半导体情报

152 4
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Pending Claim 电导调制型功率器件用穿通结构的基区优化理论

半导体学报

128 2
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Pending Claim Optimum design of base region in punch-through structure used in conductivity-modulated power devices

pan tao ti hsueh paochinese journal of semiconductors

13 0
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